 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N5301 2N5302 2N5303 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER CONDITIONS 2N5301 2N5302 2N5303 Collector-base voltage VCEO Collector-emitter voltage INC NG S HA 2N5301 2N5302 2N5303 2N5303 OND MIC E Open emitter Open base Open collector TOR UC VALUE 40 60 80 40 60 80 5 30 UNIT V V VEBO IC IB PD Tj Tstg Emitter-base voltage 2N5301/5302 Collector current V A 20 7.5 TC=25ae 200 200 -65~200 ae ae A W Base current Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5301 VCEO(SUS) Collector-emitter sustaining voltage 2N5302 2N5303 VCEsat-1 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage 2N5301/5302 IC=10A; IB=1A 2N5303 2N5301/5302 2N5303 2N5301/5302 2N5303 IC=20A ;IB=2A IC=15A ;IB=1.5A IC=30A ;IB=6A IC=20A ;IB=4A IC=10A; IB=1A IC=15A ;IB=1.5A IC=20A ;IB=2A IC=20A ;IB=4A IC=0.2A ;IB=0 SYMBOL 2N5301 2N5302 2N5303 CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 0.75 V 1.0 2.0 V 1.5 3.0 V 2.0 1.7 1.8 V V VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 Base-emitter saturation voltage Base-emitter saturation voltage 2N5301/5302 2N5303 VBEsat-3 Base-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N5303 2N5303 2N5303 2N5301/5302 VBE-1 VBE-2 ICEX ICEO ICBO IEBO hFE-1 hFE-2 Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 2N5303 DC current gain 2N5301/5302 2N5303 INC NG S HA 2N5301/5302 2N5301/5302 IC=15A ; VCE=2V IC=10A ; VCE=2V IC=30A ; VCE=4V CON EMI TOR DUC 2.5 1.7 1.5 3.0 2.5 1.0 10 5.0 1.0 5.0 40 15 60 2.0 V V V IC=20A ; VCE=4V VCE= Rated VCEO; VBE(off)=1.5V TC=150ae VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=10A ; VCE=2V IC=15A ; VCE=2V mA mA mA mA IC=20A ; VCE=4V 5 IC=30A ; VCE=4V IC=1A ; VCE=10V;f=1.0MHz 2 MHz hFE-3 fT DC current gain 2N5301/5302 Transition frequency 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5301 2N5302 2N5303 NG S HA INC CON EMI TOR DUC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
Price & Availability of 2N5301
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |